Layer degree of freedom for excitons in transition metal dichalcogenides
نویسندگان
چکیده
منابع مشابه
Chiral topological excitons in the monolayer transition metal dichalcogenides
We theoretically investigate the chiral topological excitons emerging in the monolayer transition metal dichalcogenides, where a bulk energy gap of valley excitons is opened up by a position dependent external magnetic field. We find two emerging chiral topological nontrivial excitons states, which exactly connects to the bulk topological properties, i.e., Chern number = 2. The dependence of th...
متن کاملOptical absorption by Dirac excitons in single-layer transition-metal dichalcogenides
We develop an analytically solvable model able to qualitatively explain nonhydrogenicexciton spectra observed recently in two-dimensional (20) semiconducting transition-metal dichalcogenides. Our exciton Hamiltonian explicitly includes additional angular momentum associated with the pseudospin degree of freedom unavoidable in 20 semiconducting materials with honeycomb structure. We claim that t...
متن کاملSelf-Limiting Layer Synthesis of Transition Metal Dichalcogenides
This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers ...
متن کاملBrightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides
We present low-temperature magneto-photoluminescence experiments which demonstrate the brightening of dark excitons by an in-plane magnetic field B applied to monolayers of different semiconducting transition metal dichalcogenides. For WSe2 and WS2 monolayers, the dark exciton emission is observed at ∼50 meV below the bright exciton peak and displays a characteristic doublet structure whose int...
متن کاملIntrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides
The band-edge optical response of transition metal dichalcogenides, an emerging class of atomically thin semiconductors, is dominated by tightly bound excitons localized at the corners of the Brillouin zone (valley excitons). A fundamental yet unknown property of valley excitons in these materials is the intrinsic homogeneous linewidth, which reflects irreversible quantum dissipation arising fr...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2019
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.99.165411